RZB12050YM
Semiconductor Devices and Associated Hardware
TRANSISTOR
RZB12050YM
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Special Features
nuclear hardness critical item; junction pattern arrangement: npn
-
Voltage Rating In Volts Per Characteristic
65.0 maximum collector to emitter reverse voltage and 65.0 maximum collector to base voltage/static/emitter open and 3.5 maximum emitter to base voltage, static, collector open
-
Criticality Code Justification
feat
-
Overall Height
0.252 inches maximum
-
Features Provided
hermetically sealed case and electrostatic sensitive
-
Internal Configuration
junction contact
-
Overall Width
0.413 inches maximum
-
Power Rating Per Characteristic
107.0 watts small-signal input power, common-collector absolute
-
Overall Length
0.945 inches maximum
-
Terminal Type And Quantity
2 tab, solder lug and 1 case
-
Current Rating Per Characteristic
3.00 amperes source cutoff current maximum
-
Semiconductor Material
silicon
-
Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter
-
Mounting Facility Quantity
2
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Inclosure Material
metal