M38510/24603BEB

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Current Rating Per Characteristic

  90.00 milliamperes reverse current, dc absolute

• Time Rating Per Chacteristic

  60.00 nanoseconds minimum access and 120.00 nanoseconds maximum access

• Specification/Standard Data

  81349-mil-m-38510/246 government specification

• Bit Quantity (Non-Core)

  262144

• Case Outline Source And Designator

  d-2 mil-m-38510

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Word Quantity (Non-Core)

  262144

• Part Name Assigned By Controlling Agency

  dynamic random access memory

• Input Circuit Pattern

  13 input

• Inclosure Configuration

  dual-in-line

• Capitance Rating Per Characteristic

  err-060 maximum and err-060 maximum

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  1.0 watts

• Overall Height

  0.400 inches maximum

• Inclosure Material

  ceramic

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Length

  0.840 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 7.0 volts maximum power source

• Operating Temp Range

  -55.0/+110.0 deg celsius

• Memory Device Type

  ram

• Features Provided

  monolithic and dynamic and w/clock and w/buffered output