352-1611-012
Semiconductor Devices and Associated Hardware
TRANSISTOR
352-1611-012
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
9hazardous material: beryllium oxide: handling procedures: do not polish,cross-section,grind or otherwise open component without taking adequate safeguards: materials contained within may be injurious to your health; junction pattern arrangement: npn
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Terminal Type And Quantity
4 uninsulated wire lead
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Inclosure Material
metal
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Power Rating Per Characteristic
290.0 milliwatts small-signal input power, common-collector minimum
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Terminal Length
0.160 inches minimum
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Overall Length
0.070 inches maximum
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Semiconductor Material
silicon
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Function For Which Designed
microwave
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case and electrostatic sensitive
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
18.0 maximum collector to emitter voltage/static/base open and 35.0 maximum collector to base voltage/static/emitter open and 3.0 maximum emitter to base voltage, static, collector open
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Mounting Method
terminal
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Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter and 200.0 maximum static forward current transfer ratio, common-emitter
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Overall Diameter
0.099 inches minimum and 0.101 inches maximum
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air