NH752270
Semiconductor Devices and Associated Hardware
TRANSISTOR
NH752270
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Overall Length
1.573 inches maximum
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Internal Configuration
field effect
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Mounting Method
unthreaded hole
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Field Force Effect Type
electrostatic charge
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Features Provided
hermetically sealed case and electrostatic sensitive
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Special Features
nuclear hardness critical item
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Inclosure Material
metal
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Overall Height
0.360 inches maximum
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Overall Width
1.050 inches maximum
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Mounting Facility Quantity
2
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Channel Polarity And Control Type
n-channel junction type
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Criticality Code Justification
feat
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
200.0 maximum breakdown voltage,drain-to-source,with all other terminals short-circuited to source and 4.0 maximum gate to source threshold voltage
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Current Rating Per Characteristic
30.00 amperes maximum on-state drain current
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Power Rating Per Characteristic
150.0 watts maximum total device dissipation
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Terminal Type And Quantity
2 pin and 1 case