NH312A2938-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
NH312A2938-2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
1.252 inches maximum
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Overall Height
0.610 inches minimum
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Overall Width
0.700 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-66
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Mounting Method
unthreaded hole
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Features Provided
burn in and
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Features Provided
hermetically sealed case
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Criticality Code Justification
feat
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
7.0 maximum emitter to base voltage, static, collector open
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to emitter voltage/static/base open and
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Current Rating Per Characteristic
10.00 amperes maximum collector current, dc
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Power Rating Per Characteristic
40.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
2 pin
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Special Features
nuclear hardness critical item
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to base voltage/static/emitter open and
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Features Provided
electrostatic sensitive and
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Field Force Effect Type
electrostatic charge
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Overall Length
1.188 inches minimum and