NE71000 VC GE 1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
NE71000 VC GE 1
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Overall Height
0.006 inches maximum
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Mounting Method
compression
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Field Force Effect Type
electrostatic charge
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Features Provided
electrostatic sensitive
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Semiconductor Material
gallium arsenide
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Voltage Rating In Volts Per Characteristic
5.0 maximum drain to source voltage and
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Current Rating Per Characteristic
120.00 milliamperes maximum drain current
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Power Rating Per Characteristic
400.0 milliwatts maximum total power dissipation
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Special Features
nuclear hardness critical item
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Terminal Type And Quantity
1 case
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Inclosure Material
metal
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Overall Length
0.0178 inches nominal
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Overall Height
0.005 inches minimum and
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Overall Width
0.016 inches nominal
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Criticality Code Justification
feat
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Voltage Rating In Volts Per Characteristic
-6.0 maximum gate to source voltage
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air