MTM12N10

Technical Characteristics

• Mounting Method

  unthreaded hole

• Internal Configuration

  field effect

• Inclosure Material

  metal

• Overall Height

  0.350 inches nominal

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source

• Power Rating Per Characteristic

  75.0 watts small-signal input power, common-collector absolute

• Overall Length

  1.563 inches maximum

• Overall Width

  1.050 inches maximum

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  12.00 amperes source cutoff current maximum of standard range

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  t0-204aa