MJ2N6318HXV
Semiconductor Devices and Associated Hardware
TRANSISTOR
MJ2N6318HXV
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
0.250 inches minimum and 0.340 inches maximum
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Features Provided
burn in and hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
7.00 amperes maximum collector current, dc
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Power Rating Per Characteristic
90.0 watts maximum total power dissipation
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Special Features
junction pattern arrangement: pnp
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Terminal Type And Quantity
2 pin and 1 case
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Inclosure Material
metal
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Overall Length
1.252 inches maximum
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Overall Width
0.750 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Mounting Method
unthreaded hole
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to emitter voltage, dc and 5.0 maximum emitter to base voltage, dc and 80.0 maximum collector to base voltage, dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction