111938-001

Technical Characteristics

• Memory Device Type

  pal

• Time Rating Per Chacteristic

  10.00 nanoseconds maximum propagation delay

• Capitance Rating Per Characteristic

  10.00 input picofarads maximum and 10.00 output picofarads maximum

• Voltage Rating And Type Per Characteristic

  m0.5 volts minimum power source and 7.0 volts maximum power source

• Current Rating Per Characteristic

  115.00 milliamperes nominal supply

• Features Provided

  low power and monolithic and high performance and high speed and 3-state output and electrostatic sensitive and bidirectional

• Storage Temp Range

  m65.0/p125.0 deg celsius

• Terminal Type And Quantity

  20 printed circuit

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  14 input

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  plastic

• End Item Identification

  4935-01-262-0017 test set,guided

• Operating Temp Range

  p0.0/p75.0 deg celsius

• Body Height

  0.185 inches nominal

• Body Width

  0.270 inches nominal

• Body Length

  1.040 inches nominal

• Overall Height

  0.320 inches nominal

• Overall Length

  1.040 inches nominal