NHG431802-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
NHG431802-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
100.0 maximum drain to source voltage and 100.0 maximum drain to gate voltage and 20.0 maximum gate to source voltage
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Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector preset
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Inclosure Material
metal
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End Item Identification
satellite communications terminal an/usc-38 (v)1
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Internal Configuration
field effect
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 pin and 1 case
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Semiconductor Material
silicon
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Overall Width
1.050 inches maximum
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Current Rating Per Characteristic
56.00 amperes forward current, average any acceptable
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Special Features
nuclear hardness critical item
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Features Provided
hermetically sealed case and electrostatic sensitive
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Overall Length
1.573 inches maximum
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Criticality Code Justification
feat
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Overall Height
0.250 inches minimum and 0.360 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air