8001203JA

Technical Characteristics

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Features Provided

  monolithic and hermetically sealed and burn in and electrostatic sensitive

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Body Height

  0.150 inches minimum and 0.210 inches maximum

• Current Rating Per Characteristic

  150.00 milliamperes reverse current, dc absolute

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Time Rating Per Chacteristic

  250.00 nanoseconds maximum delay

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Bit Quantity (Non-Core)

  32768

• Word Quantity (Non-Core)

  4096

• Capitance Rating Per Characteristic

  6.00 input picofarads maximum

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum power source and 6.0 volts maximum power source

• Overall Height

  0.425 inches maximum

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  14 input

• Body Length

  1.290 inches maximum