NH7555181P31
Semiconductor Devices and Associated Hardware
TRANSISTOR
NH7555181P31
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to base voltage, dc and 4.0 maximum emitter to base voltage, dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
6.0 watts small-signal input power, common-collector preset
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Special Features
nuclear hardness critical item; junction pattern arrangement: pnp
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Criticality Code Justification
feat