PKB12005UN

Technical Characteristics

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  40.0 maximum collector to base voltage/static/emitter open and 3.0 maximum emitter to base voltage, static, collector open and 40.0 maximum collector-to-emitter, resistance between base and emitter

• Current Rating Per Characteristic

  1.20 amperes maximum collector current, dc

• Terminal Type And Quantity

  1 case and 2 ribbon

• Criticality Code Justification

  feat

• Features Provided

  burn in and electrostatic sensitive and hermetically sealed case and quality assurance level txv

• Mounting Method

  unthreaded hole

• Electrode Internally-Electrically Connected To Case

  base

• Internal Configuration

  junction contact

• Mounting Facility Quantity

  2

• Overall Width

  0.276 inches maximum

• Overall Length

  0.807 inches maximum

• Inclosure Material

  metal

• Iii Precious Material

  gold

• Iii Precious Material And Location

  terminal surfaces gold

• Special Features

  nuclear hardness critical item also this device incorporates beryllium oxide,the dust of which is toxic. the device is entirely safe if the beryllium oxide disc is not damaged; junction pattern arrangement: npn

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  17.5 watts maximum total power dissipation

• Overall Height

  0.177 inches maximum