IDT6116LA55DBRT

Technical Characteristics

• Features Provided

  static operation and electrostatic sensitive and radiation hardened and tested to mil-std-883

• Inclosure Material

  ceramic

• Criticality Code Justification

  feat and cbbl and nhcf

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  ram

• Bit Quantity (Non-Core)

  8000

• Part Name Assigned By Controlling Agency

  microcircuit,digital-2k x 8 bits,static ram

• End Item Identification

  milstar

• Nuclear Hardness Critical Feature

  hardened

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Special Features

  radiation hardned iaw esd-82-te-1390b;esd;hci

• Terminal Type And Quantity

  24 printed circuit

• Inclosure Configuration

  dual-in-line

• Case Outline Source And Designator

  d-9 mil-m-38510

• Word Quantity (Non-Core)

  2000

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply