IDT7M203S65CB
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
IDT7M203S65CB
5962 - Microcircuits, Electronic
Integrated Device Technology Inc
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Terminal Surface Treatment
solder
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Current Rating Per Characteristic
50.00 milliamperes average forward current averaged over a full 60-hz cycle not applicable
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Input Circuit Pattern
9 input
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Time Rating Per Chacteristic
85.00 nanoseconds maximum delay
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Maximum Power Dissipation Rating
4.0 watts
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Terminal Type And Quantity
28 printed circuit
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Inclosure Configuration
dual-in-line
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Word Quantity (Non-Core)
2048
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Capitance Rating Per Characteristic
35.00 input picofarads maximum and 40.00 output picofarads maximum
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Memory Device Type
first-in first-out
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Operating Temp Range
-55.0/+125.0 deg celsius
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Body Height
0.280 inches maximum
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Bit Quantity (Non-Core)
18432
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum power source and 7.0 volts maximum power source
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Body Length
1.400 inches nominal
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Body Width
0.594 inches nominal
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Output Logic Form
complementary-metal oxide-semiconductor logic
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Storage Temp Range
-65.0/+150.0 deg celsius
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Inclosure Material
ceramic
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Features Provided
burn in and monolithic and hermetically sealed and positive outputs