1138186G1

Technical Characteristics

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  11 input

• Memory Device Type

  diode matrix

• Terminal Type And Quantity

  18 printed circuit

• Inclosure Configuration

  dual-in-line

• Features Provided

  burn in and electrostatic sensitive and programmed

• Bit Quantity (Non-Core)

  1024000

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius