V11809
Semiconductor Devices and Associated Hardware
TRANSISTOR
V11809
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
plastic or ceramic
-
Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
-
Internal Configuration
field effect
-
Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
-
Voltage Rating In Volts Per Characteristic
60.0 maximum drain to gate voltage and 60.0 maximum drain to source voltage and 15.0 maximum gate to source voltage
-
Power Rating Per Characteristic
1.0 watts small-signal input power, common-emitter peak
-
Terminal Length
0.500 inches maximum
-
Semiconductor Material
silicon
-
Overall Length
0.260 inches minimum and 0.280 inches maximum
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-237
-
Current Rating Per Characteristic
0.50 milliamperes zero-gate-voltage source current pascal and 10.00 milliamperes source cutoff current universal
-
Features Provided
electrostatic sensitive
-
Overall Height
0.125 inches minimum and 0.165 inches maximum
-
Mounting Method
terminal
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Overall Width
0.160 inches minimum and 0.215 inches maximum