ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Inclosure Material
ceramic
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Maximum Power Dissipation Rating
1.0 watts
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Terminal Surface Treatment
solder
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Terminal Type And Quantity
28 printed circuit
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Case Outline Source And Designator
d-10 mil-m-38510
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Memory Device Type
eprom
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Inclosure Configuration
dual-in-line
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Features Provided
burn in and erasable and hermetically sealed and monolithic and positive outputs
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Capitance Rating Per Characteristic
6.00 input picofarads maximum and 12.00 output picofarads maximum
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Output Logic Form
transistor-transistor logic
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Body Width
0.500 inches minimum and 0.610 inches maximum
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Operating Temp Range
-55.0/+125.0 deg celsius
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Bit Quantity (Non-Core)
262144
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Current Rating Per Characteristic
125.00 milliamperes reverse current, dc absolute
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Voltage Rating And Type Per Characteristic
13.0 volts maximum power source
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Time Rating Per Chacteristic
250.00 nanoseconds maximum access
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Input Circuit Pattern
18 input
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Word Quantity (Non-Core)
32768
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Body Length
1.490 inches maximum
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Body Height
0.217 inches maximum
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Storage Temp Range
-65.0/+150.0 deg celsius