TR5548854

Technical Characteristics

• Output Logic Form

  metal oxide-semiconductor logic 1st memory

• Memory Device Type

  rom 2nd memory

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-8 mil-m-38510 2nd memory

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  d-3 mil-m-38510 1st memory

• Time Rating Per Chacteristic

  70.00 nanoseconds nominal access 2nd memory

• Memory Device Type

  eeprom 1st memory

• Inclosure Configuration

  dual-in-line

• Design Function And Quantity

  2 prom program table

• Terminal Type And Quantity

  24 case 1st memory

• Part Name Assigned By Controlling Agency

  microcircuit devices,eprom/prom

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum absolute input and 7.0 volts maximum absolute input

• Operating Temp Range

  -55.0/+100.0 deg celsius 1st memory

• Terminal Type And Quantity

  20 case 2nd memory

• Operating Temp Range

  -55.0/+125.0 deg celsius 2nd memory

• Features Provided

  programmed

• Output Logic Form

  bipolar metal-oxide semiconductor 2nd memory

• Component Function Relationship

  unmatched

• Time Rating Per Chacteristic

  450.00 nanoseconds nominal access 1st memory

• Microcircuit Device Type And Quantity

  2 memory