G494565-254

Technical Characteristics

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Part Name Assigned By Controlling Agency

  mckt digital,memory mos,eprom 64k x 16

• Case Outline Source And Designator

  d-5 mil-m-38510

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Terminal Type And Quantity

  40 beam lead

• Word Quantity (Non-Core)

  64000

• Criticality Code Justification

  feat

• End Item Identification

  milstar

• Voltage Rating And Type Per Characteristic

  4.5 volts minimum total supply and 5.5 volts maximum total supply

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Special Features

  esd;hci. selected from p/n 49956 g431117-1. desc dwg 5962-8774401xx or 5962-8680503xx

• Maximum Power Dissipation Rating

  330.0 milliwatts

• Features Provided

  hermetically sealed and radiation hardened

• Bit Quantity (Non-Core)

  16