G494565-255

Technical Characteristics

• Special Features

  esd;hci. selected from p/n 49956 g431118-1. mfg 60395 x28256dmb-25

• Inclosure Configuration

  dual-in-line

• Features Provided

  hermetically sealed and radiation hardened

• Case Outline Source And Designator

  d-10 mil-m-38510

• Memory Device Type

  eeprom

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Inclosure Material

  ceramic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Bit Quantity (Non-Core)

  8

• Word Quantity (Non-Core)

  32000

• Terminal Type And Quantity

  28 beam lead

• End Item Identification

  milstar

• Criticality Code Justification

  feat

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Part Name Assigned By Controlling Agency

  mckt,digital,memory,nmos,eeprom,32k x 8