587R514H01

Technical Characteristics

• Memory Device Type

  first-in first-out

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Bit Quantity (Non-Core)

  4608

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Terminal Type And Quantity

  28 printed circuit

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  13 input

• Word Quantity (Non-Core)

  512

• Features Provided

  burn in and electrostatic sensitive and programmed