587R892H01

Technical Characteristics

• ~1

  25.0 maximum gate to substrate voltage

• Voltage Rating In Volts Per Characteristic

  25.0 maximum drain to source voltage and -15.0 minimum gate to source voltage and -0.3 minimum gate to substrate voltage and 20.0 maximum source to substrate voltage and 30.0 maximum drain to substrate voltage and 25.0 maximum gate to source voltage and

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius ambient air

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  50.00 milliamperes source cutoff current maximum of standard range

• Internal Configuration

  field effect

• Inclosure Material

  metal

• Terminal Type And Quantity

  4 uninsulated wire lead

• Overall Length

  0.170 inches minimum and 0.210 inches maximum

• Terminal Circle Diameter

  0.100 inches nominal

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Mounting Method

  terminal

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Power Rating Per Characteristic

  300.0 milliwatts small-signal input power, common-collector preset