587R892H02

Technical Characteristics

• ~1

  25.0 maximum gate to substrate voltage

• Voltage Rating In Volts Per Characteristic

  -15.0 minimum gate to source voltage and 20.0 maximum source to substrate voltage and -0.3 minimum gate to substrate voltage and 25.0 maximum gate to source voltage and 25.0 maximum drain to source voltage and 30.0 maximum drain to substrate voltage and

• Inclosure Material

  ceramic

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Mounting Method

  terminal

• Terminal Type And Quantity

  14 printed circuit

• Overall Height

  0.075 inches minimum and 0.101 inches maximum

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius ambient air

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  50.00 milliamperes source cutoff current maximum of standard range

• Power Rating Per Characteristic

  300.0 milliwatts small-signal input power, common-collector absolute

• Overall Width

  0.390 inches maximum

• Overall Length

  0.750 inches minimum

• Internal Configuration

  field effect