53LS141H883B

Technical Characteristics

• Maximum Power Dissipation Rating

  350.0 milliwatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  burn in and monolithic and programmable

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Case Outline Source And Designator

  d-2 mil-m-38510

• Terminal Surface Treatment

  solder

• Terminal Type And Quantity

  16 printed circuit

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Material

  ceramic

• Input Circuit Pattern

  11 input

• Bit Quantity

  1024

• Voltage Rating And Type Per Characteristic

  7.0 volts nominal power source

• Memory Device Type

  prom

• Test Data Document

  96906-mil-std-883 standard