ROM/PROM

Microcircuits, Electronic

MICROCIRCUIT,MEMORY

ROM/PROM

5962-01-365-1426

5962 - Microcircuits, Electronic

Defense Electronics Supply Center

MICROCIRCUIT,MEMORY

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Technical Characteristics

  • Maximum Power Dissipation Rating

    2.0 watts

  • Storage Temp Range

    -65.0/+150.0 deg celsius

  • Case Outline Source And Designator

    d-8 mil-m-38510

  • Inclosure Material

    ceramic

  • Terminal Surface Treatment

    solder

  • Voltage Rating And Type Per Characteristic

    -1.5 volts minimum absolute input and 12.0 volts maximum absolute input

  • Terminal Type And Quantity

    20 printed circuit

  • Inclosure Configuration

    dual-in-line

  • Test Data Document

    k0656-9986-ccrq drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Current Rating Per Characteristic

    100.00 milliamperes reverse current, dc nominal

  • Part Name Assigned By Controlling Agency

    16-input 8-output and-or invert gate array

  • End Item Identification

    scadc e/i fscm k0656

  • Specification/Standard Data

    81349-mil-m-38510 government specification and 96906-mil-std-883 government standard

  • Hybrid Technology Type

    monolithic

  • Memory Device Type

    pal

  • Features Provided

    programmed

  • Input Circuit Pattern

    16 input

  • Operating Temp Range

    -55.0/+125.0 deg celsius

  • Output Logic Form

    bipolar metal-oxide semiconductor

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AS6081 Methods

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