75B049008-1003

Technical Characteristics

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• End Item Identification

  lug in unit e/i fscm 76301

• Part Name Assigned By Controlling Agency

  microcircuit,digital-programmable read only memory (prom)

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum applied and 7.0 volts maximum applied

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  633.0 milliwatts

• Test Data Document

  76301-75b049008-1003 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Bit Quantity (Non-Core)

  256

• Specification/Standard Data

  96906-mil-std-883 government standard

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Case Outline Source And Designator

  d-2 mil-m-38510

• Features Provided

  programmed

• Hybrid Technology Type

  monolithic

• Memory Device Type

  prom

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Time Rating Per Chacteristic

  50.00 nanoseconds af output megawatts

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius