T9G0201203DE

Technical Characteristics

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Overall Diameter

  2.850 inches minimum and 2.900 inches maximum

• Internal Configuration

  junction contact

• Semiconductor Material

  silicon

• Terminal Type And Quantity

  2 uninsulated wire lead w/terminal lug

• Current Rating Per Characteristic

  1000.00 amperes drain current universal

• Special Features

  junction pattern arrangement: pnpn

• Inclosure Material

  metal

• Unpackaged Unit Weight (Non-Core)

  1.000 pounds

• Electrode Internally-Electrically Connected To Case

  cathode

• Overall Length

  1.030 inches minimum and 1.070 inches maximum

• Voltage Rating In Volts Per Characteristic

  100.0 nominal repetitive peak off-state voltage