586R884H01
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
586R884H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Inclosure Material
metal
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Overall Height
1.820 inches nominal
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Internal Configuration
junction contact
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Mounting Method
unthreaded hole
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Semiconductor Material
silicon
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Terminal Type And Quantity
2 tab, solder lug
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Overall Length
3.000 inches nominal
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Overall Width
3.000 inches nominal
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Mounting Facility Quantity
4
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Electrode Internally-Electrically Connected To Case
cathode
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Internal Junction Configuration
pn
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Features Provided
burn in
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Voltage Rating In Volts Per Characteristic
45.0 nominal reverse voltage, instantaneous
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Current Rating Per Characteristic
330.00 amperes nominal average forward current averaged over a full 60-hz cycle
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Unpackaged Unit Weight
710.0 grams