JANTX2N3501
Semiconductor Devices and Associated Hardware
TRANSISTOR
JANTX2N3501
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Field Force Effect Type
electrostatic charge
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Terminal Type And Quantity
3 uninsulated wire lead
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Specification/Standard Data
13973-215099 manufacturers specification
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Function For Which Designed
amplifier
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
150.0 maximum collector to base voltage/static/emitter open and 150.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open
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Current Rating Per Characteristic
300.00 milliamperes maximum collector current, dc
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Power Rating Per Characteristic
5.0 watts maximum total power dissipation
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Test Data Document
81349-mil-s-19500 specification