JANTX2N3501

Semiconductor Devices and Associated Hardware

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JANTX2N3501

5961-01-368-9417

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Field Force Effect Type

    electrostatic charge

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Specification/Standard Data

    13973-215099 manufacturers specification

  • Overall Length

    0.240 inches minimum and 0.260 inches maximum

  • Overall Diameter

    0.335 inches minimum and 0.370 inches maximum

  • Function For Which Designed

    amplifier

  • Internal Junction Configuration

    npn

  • Mounting Method

    terminal

  • Voltage Rating In Volts Per Characteristic

    150.0 maximum collector to base voltage/static/emitter open and 150.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open

  • Current Rating Per Characteristic

    300.00 milliamperes maximum collector current, dc

  • Power Rating Per Characteristic

    5.0 watts maximum total power dissipation

  • Test Data Document

    81349-mil-s-19500 specification

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