ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Terminal Surface Treatment
solder
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Current Rating Per Characteristic
190.00 milliamperes reverse current, dc absolute
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Body Width
0.500 inches minimum and 0.610 inches maximum
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Maximum Power Dissipation Rating
1.04 watts
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Features Provided
electrostatic sensitive and 3-state output and programmed and high impedance and monolithic and bipolar and schottky
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Operating Temp Range
-55.0/+125.0 deg celsius
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Voltage Rating And Type Per Characteristic
-0.3 volts minimum power source and 7.0 volts maximum power source
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Bit Quantity (Non-Core)
65536
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Capitance Rating Per Characteristic
10.00 input picofarads maximum and 13.00 output picofarads maximum
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Memory Device Type
prom
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Word Quantity (Non-Core)
8192
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Storage Temp Range
-65.0/+150.0 deg celsius
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Case Outline Source And Designator
d-3 mil-m-38510
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Inclosure Material
ceramic
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Time Rating Per Chacteristic
55.00 nanoseconds nominal access
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Inclosure Configuration
dual-in-line
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Terminal Type And Quantity
24 printed circuit
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Input Circuit Pattern
14 input
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Body Length
1.290 inches maximum
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Output Logic Form
transistor-transistor logic
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Body Height
0.210 inches maximum