1212248-234

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  14 input

• Word Quantity

  2048

• Current Rating Per Characteristic

  -30.00 milliamperes minimum absolute output and 5.00 milliamperes maximum absolu

• Terminal Surface Treatment

  solder

• ~1

  m),monolithic silicon

• Part Name Assigned By Controlling Agency

  microcircuit,digital bipolar 16,384 bit (2kx8) programmable read-only memory(pro

• ~1

  minimum positive power supply span and 5.5 volts maximum positive power supply

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply and 4.5 volts

• Memory Device Type

  prom

• Hybrid Technology Type

  monolithic

• Test Data Document

  81349-mil-m-38510 specification and 96906-mil-std-883 standard

• Terminal Type And Quantity

  24 printed circuit

• Nondefinitive Spec/Std Data

  234 number

• Departure From Cited Document

  altered by programming,marking & testing

• Maximum Power Dissipation Rating

  1.02 watts

• End Item Identification

  an/fps-124

• Features Provided

  programmed

• Inclosure Material

  ceramic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  bipolar metal-oxide semiconductor

• Bit Quantity

  16384

• Case Outline Source And Designator

  d-9 mil-m-38510

• ~1

  te output

• ~2

  span

• Time Rating Per Chacteristic

  65.00 nanoseconds nominal access

• Specification/Standard Data

  56232-1212248 manufacturers specification control