ROM/PROM

Technical Characteristics

• Specification/Standard Data

  56232-1212248 manufacturers specification control

• Time Rating Per Chacteristic

  65.00 nanoseconds nominal access

• ~2

  span

• ~1

  te output

• Case Outline Source And Designator

  d-9 mil-m-38510

• Bit Quantity

  16384

• Output Logic Form

  bipolar metal-oxide semiconductor

• Inclosure Configuration

  dual-in-line

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Departure From Cited Document

  altered by programming,marking & testing

• Nondefinitive Spec/Std Data

  209 drawing number

• Terminal Type And Quantity

  24 printed circuit

• Test Data Document

  81349-mil-m-38510 specification and 96906-mil-std-883 standard

• Hybrid Technology Type

  monolithic

• Memory Device Type

  prom

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply and 4.5 volts

• ~1

  minimum positive power supply span and 5.5 volts maximum positive power supply

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 16,384 bit(2kx8) programmable read-only me

• ~1

  mory(prom).monolithic silicon

• Terminal Surface Treatment

  solder

• Current Rating Per Characteristic

  -30.00 milliamperes minimum absolute output and 5.00 milliamperes maximum absolu

• Input Circuit Pattern

  14 input

• Inclosure Material

  ceramic

• Features Provided

  programmed

• End Item Identification

  an/fps-124

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Maximum Power Dissipation Rating

  1.02 watts