MSC 73636R
Semiconductor Devices and Associated Hardware
TRANSISTOR
MSC 73636R
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Features Provided
electrostatic sensitive and burn in and hermetically sealed case
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Mounting Facility Quantity
2
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Electrode Internally-Electrically Connected To Case
base
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Semiconductor Material
silicon
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Current Rating Per Characteristic
3.50 amperes source cutoff current maximum
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Transfer Ratio
15.0 minimum static forward current transfer ratio, common-emitter and 100.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
2 uninsulated wire lead
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
62.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 62.0 maximum breakdown voltage, collector-to-base, emitter open and -3.5 maximum emitter supply voltage
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Overall Length
0.800 inches nominal
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Terminal Length
0.110 inches nominal
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Overall Width
0.306 inches minimum and 0.318 inches maximum
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Inclosure Material
metal
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Mounting Method
unthreaded hole
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Overall Height
0.306 inches minimum and 0.318 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction