1209128-201
Semiconductor Devices and Associated Hardware
TRANSISTOR
1209128-201
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.820 inches nominal
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Overall Height
0.140 inches nominal
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Overall Width
0.252 inches nominal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
base
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Mounting Method
unthreaded hole
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Semiconductor Material
silicon
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~1
breakdown voltage, collector-to-emitter, with base short-circuited to emitter a
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~2
nd 3.5 maximum breakdown voltage, emitter-to-base, collector open
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Voltage Rating In Volts Per Characteristic
52.0 maximum breakdown voltage, collector-to-base, emitter open and 52.0 maximum
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Transfer Ratio
20.0 minimum static forward current transfer ratio, common-emitter and 120.0 max
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
2 uninsulated wire lead
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Terminal Length
0.160 inches nominal
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Mounting Facility Quantity
2
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Internal Junction Configuration
npn
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Field Force Effect Type
electrostatic charge
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Features Provided
burn in and electrostatic sensitive and hermetically sealed case
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Current Rating Per Characteristic
1.00 milliamperes maximum collector cutoff current, dc, emitter open
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~1
imum static forward current transfer ratio, common-emitter