ROM/PROM

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Input Circuit Pattern

  9 input

• Terminal Type And Quantity

  20 printed circuit

• Time Rating Per Chacteristic

  45.00 nanoseconds nominal access

• Inclosure Configuration

  dual-in-line

• Nondefinitive Spec/Std Data

  -222 number

• Bit Quantity (Non-Core)

  4096

• Output Logic Form

  bipolar metal-oxide semiconductor

• Specification/Standard Data

  56232-1219251 manufacturers specification

• Maximum Power Dissipation Rating

  880.0 milliwatts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  programmed

• Hybrid Technology Type

  monolithic

• End Item Identification

  an/fps-124

• Memory Device Type

  prom

• Current Rating Per Characteristic

  -30.00 milliamperes collector cutoff current, dc, with specified resistance between base and emitter microamperes and 5.00 milliamperes reverse current, dc microamperes

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 4096bit prom,monolithic silicon

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-8 mil-m-38510