ROM/PROM

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• Departure From Cited Designator

  altered by programming,marking & testing

• Maximum Power Dissipation Rating

  300.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  20 printed circuit

• Terminal Surface Treatment

  solder

• Specification/Standard Data

  67268-85065 government standard and 56232-1219256 manufacturers specification control

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-8 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• End Item Identification

  an/fps-124

• Part Name Assigned By Controlling Agency

  microcircuit,digital,bipolar,programmable,logic monolithic silicon

• Hybrid Technology Type

  monolithic

• Memory Device Type

  pal

• Features Provided

  programmed

• Input Circuit Pattern

  16 input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Nondefinitive Spec/Std Data

  a finish and r case and 02 type and 204 number

• Output Logic Form

  bipolar metal-oxide semiconductor

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and -1.5 volts minimum absolute input and 12.0 volts maximum total supply and 5.5 volts maximum absolute input