ROM/PROM

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  45.00 nanoseconds nominal access

• Terminal Type And Quantity

  20 printed circuit

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-8 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  schottky and bipolar

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Device Type

  prom

• Part Name Assigned By Controlling Agency

  microcircuit,digtal,schottky,bipolar 4096 prom

• Hybrid Technology Type

  monolithic

• Current Rating Per Characteristic

  -30.00 milliamperes collector cutoff current, dc, base open absolute and 5.00 milliamperes average forward current averaged over a full 60-hz cycle absolute

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Maximum Power Dissipation Rating

  880.0 milliwatts

• Output Logic Form

  bipolar metal-oxide semiconductor

• Bit Quantity (Non-Core)

  4096