ROM/PROM

Technical Characteristics

• Time Rating Per Chacteristic

  55.00 nanoseconds af output megawatts

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum total supply and 7.0 volts maximum total supply

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• Terminal Type And Quantity

  24 printed circuit

• Inclosure Configuration

  dual-in-line

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 65536 bit prom

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-3 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Device Type

  prom

• Hybrid Technology Type

  monolithic

• Bit Quantity (Non-Core)

  65536

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Output Logic Form

  bipolar metal-oxide semiconductor

• Maximum Power Dissipation Rating

  1.04 watts

• Features Provided

  bipolar