PDM41024L55CB

Technical Characteristics

• Features Provided

  low power and monolithic and electrostatic sensitive and burn in, mil-std-883, class b

• Part Name Assigned By Controlling Agency

  microcircuit,memory,digital,cmos 128k x 8 static random acess memory(scram) low power,monolithic silicon

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  1048576

• Inclosure Material

  ceramic or glass

• Hybrid Technology Type

  monolithic

• Nondefinitive Spec/Std Data

  01 type and m class and x case and a finish

• Specification/Standard Data

  67268-5962-89598 government standard

• Body Length

  1.580 inches minimum and 1.700 inches maximum

• Word Quantity (Non-Core)

  131072

• Memory Device Type

  ram

• Terminal Type And Quantity

  32 printed circuit

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Time Rating Per Chacteristic

  55.00 nanoseconds nominal access

• Body Height

  0.129 inches minimum and 0.230 inches maximum

• Body Width

  0.580 inches minimum and 0.605 inches maximum

• Inclosure Configuration

  dual-in-line

• ~1

  specification format; excludes commercial catalogs, ind

• Test Data Document

  96906-mil-std-480 standard (includes industry or association standards, individual manufactureer standards, etc.). and 81349-mil-i-38535 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in