ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
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Technical Characteristics
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~1
data on certain environmental and performanc
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Output Logic Form
bipolar metal-oxide semiconductor
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Operating Temp Range
-55.0/+125.0 deg celsius
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Part Name Assigned By Controlling Agency
microcircuit,programmed pal
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Memory Device Type
pal
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Hybrid Technology Type
monolithic
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Purchase Description Identification
04939-79931053-001
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Input Circuit Pattern
20 input
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Features Provided
bipolar and programmed
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Storage Temp Range
-65.0/+150.0 deg celsius
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Specification/Standard Data
67268-5962-87671013a government standard
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Inclosure Configuration
leadless flat pack
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum total supply and 7.0 volts maximum total supply
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Departure From Cited Designator
altered by programming & marking
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Terminal Type And Quantity
28 printed circuit
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Current Rating Per Characteristic
100.00 milliamperes reverse current, dc nominal
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Maximum Power Dissipation Rating
1.2 watts
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Case Outline Source And Designator
c-4 mil-m-38510
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Test Data Document
81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type