1372FW1061-002

Technical Characteristics

• Time Rating Per Chacteristic

  45.00 nanoseconds maximum access

• Part Name Assigned By Controlling Agency

  microcircuit,programmed

• Bit Quantity (Non-Core)

  16384

• Input Circuit Pattern

  14 input

• Memory Device Type

  eprom

• Case Outline Source And Designator

  d-9 mil-m-38510

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc absolute

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• End Item Identification

  eo lorops

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Features Provided

  programmed and compatible cmos and ultraviolet erasable and electrostatic sensitive and burn in and hermetically sealed and monolithic and tested to mil-std-883

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Body Height

  0.180 inches minimum and 0.200 inches maximum

• Criticality Code Justification

  feat

• Body Length

  1.260 inches minimum and 1.280 inches maximum

• Special Features

  electrostatic discharge sensitive; altered item,make from pn 5962-8752901la,programmed per 1062-u56.p82,fd137200061-001,checksum f4b0; nha pn 1372ae1062

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Capitance Rating Per Characteristic

  6.00 input picofarads maximum and 8.00 output picofarads maximum

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  2048

• Inclosure Configuration

  dual-in-line