ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Special Features
one time asynchronous programmable
-
Case Outline Source And Designator
d-9 mil-m-38510
-
Voltage Rating And Type Per Characteristic
-0.5 volts minimum applied and 7.0 volts maximum applied
-
Specification/Standard Data
67268-5962-90555 government standard
-
Inclosure Configuration
dual-in-line
-
Terminal Type And Quantity
24 printed circuit
-
Current Rating Per Characteristic
-16.00 milliamperes average forward current averaged over a full 60-hz cycle not applicable
-
Operating Temp Range
-55.0/+125.0 deg celsius
-
Memory Device Type
pal
-
Hybrid Technology Type
monolithic
-
End Item Identification
f16aircombfit e/i fscm 81755
-
Input Circuit Pattern
20 input
-
Time Rating Per Chacteristic
35.00 nanoseconds nominal access
-
Nondefinitive Spec/Std Data
l case and 01 type and a finish
-
Output Logic Form
complementary-metal oxide-semiconductor logic
-
Storage Temp Range
-65.0/+150.0 deg celsius
-
Features Provided
asynchronous and monolithic and programmable
-
Inclosure Material
ceramic
-
Maximum Power Dissipation Rating
1.0 watts
-
Terminal Surface Treatment
solder
-
Part Name Assigned By Controlling Agency
microcircuit,memory,digital,cmos,one time programmable,asynchronous,pald,monolithic silicon
-
Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.). and 81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in
-
~1
specification format; excludes commercial catalogs, ind