ROM/PROM

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Maximum Power Dissipation Rating

  1.04 watts

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Time Rating Per Chacteristic

  95.00 nanoseconds nominal access

• Hybrid Technology Type

  monolithic

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum applied and 7.0 volts maximum applied

• Part Name Assigned By Controlling Agency

  microcircuit,memory,digital,schottky bipolar 32k prom,monolithic silicon

• Memory Device Type

  prom

• Specification/Standard Data

  67268-8200801ja government standard

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Departure From Cited Designator

  altered by progamming & marking

• Terminal Surface Treatment

  solder

• Bit Quantity (Non-Core)

  32768

• Features Provided

  electrostatic sensitive and schottky and monolithic and programmed and bipolar

• Purchase Description Identification

  49956-g395748-10

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• End Item Identification

  sub hpa e/i fscm 49956

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type