NH123A879-3
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
NH123A879-3
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
~1
data on certain environmental and performanc
-
Output Logic Form
bipolar metal-oxide semiconductor
-
End Item Identification
valve-selecti e/i fscm 70339
-
Operating Temp Range
-55.0/+125.0 deg celsius
-
Criticality Code Justification
feat
-
Hybrid Technology Type
monolithic
-
Time Rating Per Chacteristic
40.00 nanoseconds nominal access
-
Memory Device Type
prom
-
Special Features
nuclear hardness critical item
-
Storage Temp Range
-65.0/+150.0 deg celsius
-
Specification/Standard Data
67268-8200803ja government standard and 03640-123a879-3 manufacturers source control
-
Case Outline Source And Designator
d-3 mil-m-38510
-
Inclosure Material
ceramic
-
Terminal Surface Treatment
solder
-
Bit Quantity (Non-Core)
32768
-
Word Quantity (Non-Core)
4096
-
Maximum Power Dissipation Rating
1.4 watts
-
Departure From Cited Designator
altered by programming & marking
-
Part Name Assigned By Controlling Agency
microcircuit memory 32k prom
-
Inclosure Configuration
dual-in-line
-
Terminal Type And Quantity
24 printed circuit
-
Current Rating Per Characteristic
100.00 milliamperes reverse current, dc nominal
-
Features Provided
bipolar and radiation hardened and programmed and schottky
-
Voltage Rating And Type Per Characteristic
-0.3 volts minimum total supply and 7.0 volts maximum total supply
-
Test Data Document
81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type