ROM/PROM

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Bit Quantity (Non-Core)

  32768

• Word Quantity (Non-Core)

  4096

• Specification/Standard Data

  67268-8200803ja government standard and 03640-123a879-4 manufacturers source control

• Departure From Cited Designator

  altered by programming & marking

• Part Name Assigned By Controlling Agency

  microcircuit memory 32k prom

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  40.00 nanoseconds af output megawatts

• Terminal Type And Quantity

  24 printed circuit

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum total supply and 7.0 volts maximum total supply

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-3 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Special Features

  nuclear hardness critical item

• Memory Device Type

  prom

• Hybrid Technology Type

  monolithic

• Criticality Code Justification

  feat

• Operating Temp Range

  -55.0/+125.0 deg celsius

• End Item Identification

  valve-selecti e/i fscm 70339

• Output Logic Form

  bipolar metal-oxide semiconductor

• Maximum Power Dissipation Rating

  1.04 watts

• Features Provided

  bipolar and programmed and radiation hardened and schottky