JANTX2N4399
Semiconductor Devices and Associated Hardware
TRANSISTOR
JANTX2N4399
5961 - Semiconductor Devices and Associated Hardware
Microsemi Corp. - Massachusetts
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
115.0 watts any acceptable preset
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Special Features
junction pattern arrangement: pnp
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Voltage Rating In Volts Per Characteristic
60.0 nominal breakdown voltage, collector-to-base, emitter open and 60.0 nominal breakdown voltage, collector-to-emitter, base open and 5.0 nominal breakdown voltage, emitter-to-base, collector open
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Terminal Type And Quantity
2 uninsulated wire lead
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Semiconductor Material
silicon
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Terminal Length
0.050 inches maximum
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Current Rating Per Characteristic
7.50 amperes all primaries minimum and 30.00 amperes all primaries maximum
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Transfer Ratio
25.0 minimum static forward current transfer ratio, common-emitter
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Overall Length
0.270 inches minimum and 0.380 inches maximum