BSS123E6327
Semiconductor Devices and Associated Hardware
TRANSISTOR
BSS123E6327
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector preset
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Terminal Type And Quantity
3 printed circuit
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
sot-23
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Voltage Rating In Volts Per Characteristic
100.0 maximum drain to gate voltage and 100.0 maximum drain to source voltage and 20.0 maximum gate to source voltage
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Special Features
e6327 suffix denotes tape and reel c/o 3000 ea.
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Overall Height
1.1 millimeters maximum
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Mounting Method
terminal
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Overall Width
2.6 millimeters nominal
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Current Rating Per Characteristic
170.00 milliamperes source cutoff current maximum of standard range
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Semiconductor Material
silicon
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Overall Length
2.9 millimeters nominal
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Inclosure Material
plastic