M38510/22402BYA

Technical Characteristics

• Case Outline Source And Designator

  d-10 mil-m-38510

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Features Provided

  programmed and burn in and monolithic and electrostatic sensitive and ultraviolet erasable

• Terminal Type And Quantity

  28 printed circuit

• Time Rating Per Chacteristic

  250.00 nanoseconds maximum access

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Voltage Rating And Type Per Characteristic

  6.25 volts maximum power source

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  16 input

• Bit Quantity (Non-Core)

  262144