ROM/PROM

Technical Characteristics

• Bit Quantity (Non-Core)

  32768

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Time Rating Per Chacteristic

  300.00 nanoseconds maximum access

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  prom

• Features Provided

  burn in and electrostatic sensitive

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder